2N6041

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

2N6041

COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

2N6041

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

2N6041

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

2N6041

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER

2N6041

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-4A •ComplementtoType2N6044 APPLICATIONS •Designedforgeneralpurposeamplifierandl

2N6041

POWERDERATING

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

2N6041

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS