零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社FUJI | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社FUJI | |||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET | VishayVishay Siliconix 威世科技 | |||
HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SILAN/士兰微 |
22+ |
TO-3P |
150000 |
挂的就有,常备现货 |
询价 | ||
UTC |
23/22+ |
TO3PB |
6000 |
20年老代理.原厂技术支持 |
询价 | ||
FUJITS |
1635+ |
TO-3P |
6000 |
好渠道!好价格!一片起卖! |
询价 | ||
FUJITS |
2023+ |
TO-3P |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FUJITS |
21+ |
TO-3P |
35210 |
一级代理/放心采购 |
询价 | ||
FUJI/富士电机 |
23+ |
TO-3PF |
10000 |
公司只做原装正品 |
询价 | ||
FUJI/富士电机 |
TO-3PF |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
FUJI/富士电机 |
22+ |
TO-3PF |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
FUJI |
24+ |
TO-3PF |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
23+ |
N/A |
90350 |
正品授权货源可靠 |
询价 |
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