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23N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

23N50E

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMH23N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FMH23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMH23N50ES

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMR23N50E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMR23N50ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMV23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

FMV23N50ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

Fuji

IRFP23N50L

PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A)

FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFP23N50L

PowerMOSFET

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技

Vishay

IRFP23N50L

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

IRFP23N50L

PowerMOSFET

FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza

VishayVishay Siliconix

威世科技

Vishay

IRFP23N50LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

IRFP23N50LPBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A)

FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
供应商型号品牌批号封装库存备注价格
SILAN/士兰微
22+
TO-3P
150000
挂的就有,常备现货
询价
UTC
23/22+
TO3PB
6000
20年老代理.原厂技术支持
询价
FUJITS
1635+
TO-3P
6000
好渠道!好价格!一片起卖!
询价
FUJITS
2023+
TO-3P
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
FUJITS
21+
TO-3P
35210
一级代理/放心采购
询价
FUJI/富士电机
23+
TO-3PF
10000
公司只做原装正品
询价
FUJI/富士电机
TO-3PF
22+
6000
十年配单,只做原装
询价
FUJI/富士电机
22+
TO-3PF
25000
只做原装进口现货,专注配单
询价
FUJI
24+
TO-3PF
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
23+
N/A
90350
正品授权货源可靠
询价
更多23N50PN供应商 更新时间2024-4-27 14:54:00