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23N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

23N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

23N50E

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

23N50E

N-CHANNEL SILICON POWER MOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFUJI CORPORATION

株式会社FUJI

23N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMH23N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FMH23N50E

N-CHANNELSILICONPOWERMOSFET

FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V)

FujiFUJI CORPORATION

株式会社FUJI

FMH23N50ES

N-CHANNELSILICONPOWERMOSFETFeatures

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

FMR23N50E

N-CHANNELSILICONPOWERMOSFET

FujiFUJI CORPORATION

株式会社FUJI

FMR23N50ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

FMV23N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

FMV23N50ES

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFUJI CORPORATION

株式会社FUJI

IRFP23N50L

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP23N50L

PowerMOSFET

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技

IRFP23N50L

PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A)

FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP23N50L

PowerMOSFET

FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza

VishayVishay Siliconix

威世科技

IRFP23N50LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFP23N50LPBF

PowerMOSFET

FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
FUJI
1408+
TO-3P
8000
绝对原装进口现货可开增值税发票
询价
FUI
19+
TO-3P
58893
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
FUJI-富士
22+23+
TO-3P
30546
绝对原装正品全新进口深圳现货
询价
FUJI
18+
TO-3p
85600
保证进口原装可开17%增值税发票
询价
23+
N/A
46080
正品授权货源可靠
询价
.
1746+
pcs
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
FUJI/富士电机
22+
TO-3P
20000
深圳原装现货正品有单价格可谈
询价
FUJI/富士电机
23+
TO-247
10000
公司只做原装正品
询价
FUJITSU/富士通
23+
TO-247
50000
全新原装正品现货,支持订货
询价
FUJITSU/富士通
22+
TO-247
6000
十年配单,只做原装
询价
更多23N50E供应商 更新时间2024-5-15 10:07:00