1N5711-CUTTAPE技术资料参数原装现货-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N5711	文件：52.1 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODE DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
1N5711	文件：25.59 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES •1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED	CDI-DIODE Compensated Deuices Incorporated	CDI-DIODE
1N5711	文件：49.52 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection	DIODESDiodes Incorporated 达尔科技	DIODES
1N5711	文件：99.85 Kbytes Page：2 Pages	SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company	GE
1N5711	文件：56.87 Kbytes Page：6 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv	HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司	HP
1N5711	文件：110.08 Kbytes Page：2 Pages	SchottkyBarrierSwitchingDiode Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N5711	文件：126.35 Kbytes Page：2 Pages	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark Good-Ark	Good-Ark
1N5711	文件：46.24 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N5711	文件：36.02 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：82.78 Kbytes Page：2 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司	CHENYI
1N5711	文件：30.8 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5711	文件：56.73 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N5711	文件：36.05 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC	EIC
1N5711	文件：55.97 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：67.45 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：124.62 Kbytes Page：1 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N5711	文件：128.49 Kbytes Page：4 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features •MoistureSensitivity:Level1perJ-STD-020C •HighReverseBreakdownVoltage •LowForwardVoltageDrop •ForGeneralPurposeApplication •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N5711	文件：273.845 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N5711	文件：217.69 Kbytes Page：2 Pages	15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司	SUNMATE
1N5711	文件：264.7 Kbytes Page：7 Pages	PicoSecondSwitchingSpeed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAvago 安华高安华高科技	AVAGO

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	1N5711E3	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市惊羽科技有限公司	1N5711E3	MICROCHIP-微芯	24+25+/26+27+	DO-35-2	6328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市宏捷佳电子科技有限公司	1N5711E3	Microchip Technology	24+	DO-35	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市安富世纪电子有限公司	1N5711E3	MICROCHIP	23+		7300	专注配单,只做原装进口现货	询价
深圳市威尔健半导体有限公司	1N5711IC	ST/意法	23+	DO-35	50000	全新原装正品现货,支持订货	询价
深圳市振宏微科技有限公司	1N5711T25	agi	23+	NA	116	专做原装正品,假一罚百!	询价
艾睿国际（香港）有限公司	1N5711T25	AGI	2021+	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市赛特兴科技有限公司	1N5711TR	ST	23+	原厂原封	16900	正规渠道,只有原装!	询价
深圳市星佑电子有限公司	1N5711TR	ST	22+	原厂原封	16900	支持样品原装现货提供技术支持!	询价
深圳市艾宇欣科技有限公司	1N5711UB	Microsemi	1942+	N/A	908	加我qq或微信，了解更多详细信息,体验一站式购物	询价

更多1N5711-CUTTAPE供应商更新时间2024-5-25 15:00:00

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