零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■ | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■ | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.35A,RDS(ON)=10.5Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.3A,RDS(ON)=15W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.3A,RDS(ON)=15Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■ | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
TO-263-2LPlastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
TO-92Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LONTEN |
17+ |
DPAKTO-25 |
25500 |
门市原装现货!支持实单,一片起卖! |
询价 | ||
LINEAR/凌特 |
2021+ |
TO-251 |
16700 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ST |
22+ |
TO-92 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
22+ |
TO-92 |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
ST |
23+ |
TO-92 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
LGE |
21+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NEC |
2339+ |
DIP |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
NEC |
23+ |
DIP |
9280 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
NEC |
22+23+ |
DIP |
49387 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
NEC |
2022+ |
DIP |
5345 |
授权代理分销商,现货库存可持续供货! |
询价 |
相关规格书
更多- 04812391AC
- 04858610AA
- 1.5KE12A
- 1.5KE200A
- 1.5KE250A
- 1.5KE30A
- 1.5KE400CA
- 1.5KE68A
- 100131DC
- 100314QC
- 100325DC
- 100331QC
- 100341QC
- 100411B
- 1034AH-J
- 10393
- 10485-11
- 10497-15
- 10BQ015TR
- 10BQ100TR
- 10H124
- 10H131
- 10MQ040NTR
- 11235-14
- 1141LK
- 11C06DC
- 12289
- 12C508
- 13003
- 13B0140
- 14066B
- 150085-1
- 15N03L
- 16221256
- 1638
- 1678
- 1701LPC
- 17256DPC
- 17256EPC
- 1765DPC
- 1826-3206
- 19TQ015
- 1N4001
- 1N4003
- 1N4007
相关库存
更多- 04858609AA
- 0582L2
- 1.5KE18A
- 1.5KE24A
- 1.5KE27A
- 1.5KE33A
- 1.5KE6.8A
- 1.5KE82A
- 100302QC
- 100324QC
- 100325QC
- 100336QC
- 100351QC
- 1034AH
- 10358
- 10464-15
- 10497-14
- 1075
- 10BQ040TR
- 10H116
- 10H125
- 10H350
- 11229-12
- 1141LF
- 11596-21
- 1200P60
- 1251
- 12C508A
- 1330A
- 13B0141
- 1458
- 15218
- 16206550
- 16258256
- 16700
- 16CTQ100
- 17128DPC
- 17256EJC
- 1736DPC
- 1826-0109
- 18CV8PC-25
- 1H0165R
- 1N4002
- 1N4004
- 1N4148