丝印：YJS4606A；Package：SOP-8；N-Channel and P-Channel Complementary Power MOSFET

文件：688.72 Kbytes 页数：9 Pages

YANGJIE

扬杰电子

中低压Mosfet

YJ

益嘉源

Binary reduction valve

文件：99.4 Kbytes 页数：1 Pages

FESTOFesto Corporation.

费斯托费斯托（中国）有限公司

N- and P-Channel 30 V (D-S) MOSFET

文件：1.22669 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N and P-Channel Enhancement Mode Power MOSFET

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON)

文件：3.72956 Mbytes 页数：8 Pages

TUOFENG

拓锋半导体