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CED60P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

LMAK60P03

-30VP-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

NCE60P03R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE60P03Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

RFG60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFG60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features •60A,30V •rDS(ON)=0.027Ω •TemperatureCompensatingPSPICE®Model •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

STTH60P03S

ULTRAFASTRECTIFIERPDPENERGYRECOVERY

DESCRIPTION TheSTTH60P03SWisanUltrafastRecoveryPowerRectifierdedicatedtoenergyrecoveryinPDPapplication. ThekeyparametersoftheDERCdiodefortheenergyrecoverycicuithavebeenoptimizedinordertodecreasepowerlosses. FEATURESANDBENEFITS ■Ultrafastrecovery

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STTH60P03SW

ULTRAFASTRECTIFIERPDPENERGYRECOVERY

DESCRIPTION TheSTTH60P03SWisanUltrafastRecoveryPowerRectifierdedicatedtoenergyrecoveryinPDPapplication. ThekeyparametersoftheDERCdiodefortheenergyrecoverycicuithavebeenoptimizedinordertodecreasepowerlosses. FEATURESANDBENEFITS ■Ultrafastrecovery

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

UTT60P03

-60A,-30V,P-CHANNELPOWERMOSFETS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

WSF60P03

P-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微硕半岛体深圳市龍華區大浪街道高峰社區忠信路9號匯億大廈807

供应商型号品牌批号封装库存备注价格
YJ
22+
PDFN3*3
30000
应用于 PD快充 原装正品
询价
JST/日压
2308+
182066
一级代理,原装正品,公司现货!
询价
YC
36118
SOT23-3
2015
代理电压检测IC,型号齐全,优势产品
询价
YC
1742+
SOT23-3
98215
只要网上有绝对有货!只做原装正品!
询价
YC
N/A
SOT23-3
15000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
YC
24+25+/26+27+
SOT-23-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
YC
22+
SOT23-3
25000
只有原装绝对原装,支持BOM配单!
询价
YC
22+
SOT23-3
25000
只有原装原装,支持BOM配单
询价
YC
23+
SOT23-3
9000
原装现货
询价
更多YC60P03ADE供应商 更新时间2024-6-11 9:30:00