| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
XX1188 | The XX1188 power-management IC (PMIC) is an complete | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 |  | |
20WAUDIOPOWERAMPLIFIER description TheμPC1188HismonolithicintegratedcircuitandapoweramplifierdesignedforHi-Fiaudiosetsandina10pinSingleIn-Lineplasticpackage.μPC1188Hcanprovide20W(TYP.)to8ohmsat1T.H.D.and±22VSupplyvoltage. FEATURES ●Highoutputpower. 20WTYP.(VCC=±22 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | ||
OpticalSplitter | EMCORE Emcore Corporation |  | ||
8ChannelCapacitiveTouchSensorwith8LEDDrivers | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
HighPowerDPDTSwitchwithLogicControl | SonySONY 索尼 |  | ||
8CHGND/OPENDISCRETEINTERFACEICW/EXTHVPROTECTION | DEIAZ Device Engineering Incorporated |  | ||
8CHGND/OPENDISCRETEINTERFACEICW/EXTHVPROTECTION | DEIAZ Device Engineering Incorporated | | ||
8CHGND/OPENDISCRETEINTERFACEICW/EXTHVPROTECTION | DEIAZ Device Engineering Incorporated | | ||
NotebookComputers | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | ||
NotebookComputers | SMSC SMSC |  | ||
CMOSIC128K/96K-byteROMand12288-byteRAMintegrated8-bit1-chipMicrocontrollerwithUSB-hostcontroller | SANYOSanyo 三洋三洋电机株式会社 |  | ||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES ●LowVCE(sat). ●ComplementstheFTD1766 | FS First Silicon Co., Ltd |  |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XFUSE |
99+ |
DIP-2 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
Wakefield |
新 |
63 |
全新原装 货期两周 |
询价 | |||
Wakefield |
2022+ |
59 |
全新原装 货期两周 |
询价 | |||
N/A |
00/01+ |
TSSOP28 |
85 |
全新原装100真实现货供应 |
询价 | ||
ST |
10+ |
DIP |
7800 |
全新原装正品,现货销售 |
询价 | ||
STM |
08+ |
DIP |
1000 |
询价 | |||
ST |
DIP |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
23+ |
N/A |
45980 |
正品授权货源可靠 |
询价 | |||
MOT |
21+ |
QFP |
6000 |
绝对原裝现货 |
询价 |
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