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MSS1P6

Surface-MountSchottkyBarrierRectifiers

FEATURES •Verylowprofile-typicalheightof0.65mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3 •Ma

VishayVishay Siliconix

威世科技威世科技半导体

MSS1P6

SurfaceMountSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

MSS1P6

SurfaceMountSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

MSS1P6

SurfaceMountSchottkyBarrierRectifiers

FEATURES •Verylowprofile-typicalheightof0.65mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •AEC-Q101qualifiedavailable-Automotiveorderingcode:baseP/NHM3 •Mate

VishayVishay Siliconix

威世科技威世科技半导体

SS1P6L

HighCurrentDensitySurface-MountSchottkyBarrierRectifier

FEATURES •Verylowprofile-typicalheightof1.0mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable •Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半导体

SS1P6L

HighCurrentDensitySurfaceMountSchottkyBarrierRectifiers

VishayVishay Siliconix

威世科技威世科技半导体

SS1P6L

High-CurrentDensitySurfaceMountSchottkyBarrierRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V1P6

Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

FEATURES •Verylowprofile-typicalheightof0.65mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive

VishayVishay Siliconix

威世科技威世科技半导体

V1P6

Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

XMA-C1P6

ThiscarantennareceiverU.Ssatellitedigitalradiobroadcasts

MITSUMIMitsumi Electronics, Corp.

三美三美电机株式会社

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