WST4500D数据手册MACOM中文资料规格书

描述 Description

The WST4500D is a gallium nitride (GaN) high  electron mobility transistor (HEMT). GaN has  superior properties compared to silicon or gallium  arsenide, including higher breakdown voltage,  higher saturated electron drift velocity, and higher  thermal conductivity. GaN HEMTs offer greater  power density and wider bandwidths compared to Si and GaAs transistors. 

特性 Features

· Small Signal Gain: 15 dB @ 4 GHz
· PSAT: 60 W
·28 V Operation
·High Breakdown Voltage
·High Temperature Operation
·Up to 4 GHz Operation
·High Efficiency