HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

ST

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH SPEED 16K x 8 CMOS EPROM

GENERAL DESCRIPTION The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Pow

文件：48.96 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体