| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
GepcoaBeldenBrand,AnalogAudioCable,8Pair22AWG(7x30)BareCopperconductors,FEPInsulation,IndividuallyShielded,PVDFJacket,CMPrated | BELDEN Belden Inc. | BELDEN | ||
DCMotorForward/ReverseDualSpeedElectronicGovernors ■Overview TheAN6608,theAN6609NandtheAN6609NSaretheelectronicgovernorswhichincorporatetheforward/reverserotationanddoublespeedcontrolsoftheDC-motorsusedforradio/cassettetaperecorder,andthefunctionssuchasfastforward,rewind,brake,andpause.Theyarealsoavailab | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
20VComplementaryMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HELP3TMBand8/WCDMA3.4V/28.5dBmLinearPAModule | ANADIGICS ANADIGICS | ANADIGICS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4A,RDS(ON)=76mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4A,RDS(ON)=76mW@VGS=10V. RDS(ON)=100mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Channel60V(D-S)MOSFET FEATURES •100RgandUISTested •DT-TrenchPowerMOSFET APPLICATIONS •NotebookPCCore •VRM/POL | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
8/6-SlotDesktop/WallmountChassiswithPS/2andRedundantPowerSupplyOptions | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
lHEXFETPowerMOSFET Description TheIRF6608combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ApplicationSpecificMOSFETs Description TheIRF6608combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SynchronousRectifiedMOSFETDriverwithPre-BiasedLoadStartupCapability | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SynchronousRectifiedMOSFETDriverwithPre-BiasedLoadStartupCapability TheISL6608isahighfrequency,MOSFETdriveroptimized todrivetwoN-ChannelpowerMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdrivercombinedwith anIntersilHIP63xxorISL65xxMulti-PhaseBuckPWM controllerformsacompletesingle-stagecore-voltage regulatorsolutio | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SynchronousRectifiedMOSFETDriver | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SynchronousRectifiedMOSFETDriver | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SynchronousRectifiedMOSFETDriverwithPre-BiasedLoadStartupCapability TheISL6608isahighfrequency,MOSFETdriveroptimized todrivetwoN-ChannelpowerMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdrivercombinedwith anIntersilHIP63xxorISL65xxMulti-PhaseBuckPWM controllerformsacompletesingle-stagecore-voltage regulatorsolutio | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SynchronousRectifiedMOSFETDriverwithPre-BiasedLoadStartupCapability | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SynchronousRectifiedMOSFETDriverwithPre-BiasedLoadStartupCapability TheISL6608isahighfrequency,MOSFETdriveroptimized todrivetwoN-ChannelpowerMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdrivercombinedwith anIntersilHIP63xxorISL65xxMulti-PhaseBuckPWM controllerformsacompletesingle-stagecore-voltage regulatorsolutio | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SynchronousRectifiedMOSFETDriverwithPre-BiasedLoadStartupCapability | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SynchronousRectifiedMOSFETDriver | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SynchronousRectifiedMOSFETDriver | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
WN6608
- 制造商：
JORJIN
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZX |
2011 |
9 |
原装正品送货上门假一赔十 |
询价 | |||
JORJIN |
1802+ |
WIFI |
6528 |
只做原装正品现货,或订货假一赔十! |
询价 | ||
JORJIN |
2022+ |
2080 |
全新原装 货期两周 |
询价 | |||
JORJIN |
23+ |
WIFI |
30000 |
原装现货,假一赔十. |
询价 | ||
JORJIN领英 |
23+ |
50000 |
全新原装正品现货,支持订货 |
询价 | |||
JORJIN |
WIFI |
12000 |
原装现货,长期供应,终端账期支持 |
询价 | |||
JORJIN领英 |
23+ |
NA/ |
3305 |
原装现货,当天可交货,原型号开票 |
询价 | ||
JORJIN |
11 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
MODULE |
21+ |
MODULE |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MODULE |
11+ |
MODULE |
112 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
相关规格书
更多- WN6608-00
- WN7-00368
- WN7-00404
- WN7-00659
- WNA100FE
- WNA10RFE
- WNA150FE
- WNA15RFE
- WNA1R0FE
- WNA200FE
- WNA250F
- WNA250FET
- WNA25RFET
- WNA2R0FET
- WNA4R0FET
- WNA51RFET
- WNA5R0FET
- WNA75RFE
- WN-AA/C140
- WNAA_2TGAST WAF
- WN-AAXP/P
- WNAR10FE
- WNAR25FE
- WNAR50FE
- WNAR75FE
- WNAR75FET
- WNB050SBN
- WNB088SBN080
- WNB100FE
- WNB100FET
- WNB108SBN
- WNB10RFE
- WNB10RFET
- WNB150FE
- WNB150FET
- WNB15RFE
- WNB15RFT
- WNB1K0FET
- WNB1R0FET
- WNB200FET
- WNB250FE
- WNB25RFE
- WNB2R0FE
- WNB330FE
- WNB470FE
相关库存
更多- WN700368
- WN700404
- WN7-00615
- WN-832-0CU
- WNA100FET
- WNA10RFET
- WNA150FET
- WNA15RFET
- WNA1R0FET
- WNA200FET
- WNA250FE
- WNA25RFE
- WNA2R0FE
- WNA4R0FE
- WNA51RFE
- WNA5R0FE
- WNA68RFE
- WNA75RFET
- WN-AA/W140
- WN-AAXL
- WNAP-1260
- WNAR10FET
- WNAR25FET
- WNAR50FET
- WNAR75FE
- WNAR75FET
- WNB050SBN
- WNB088SBN080
- WNB100FE
- WNB100FET
- WNB108SBN
- WNB10RFE
- WNB10RFET
- WNB150FE
- WNB150FET
- WNB15RFET
- WNB1K0FE
- WNB1R0FE
- WNB200FE
- WNB250F
- WNB250FET
- WNB25RFET
- WNB2R0FET
- WNB330FET
- WNB470FET
