首页 >WKS2007ARP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DUALN-ChannelMOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微硕半导体微硕半导体（深圳）有限公司 | WIINSOK | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=28mat6.5A •7amps | Zetex Zetex Semiconductors | Zetex | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=28mat6.5A | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=28mat6.5A | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=28mat6.5A •7amps | Zetex Zetex Semiconductors | Zetex | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=28mat6.5A | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=28mat6.5A •7amps | Zetex Zetex Semiconductors | Zetex | ||
30VNPNLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 DESCRIPTION PackagedintheSOT89outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extemelylowequivalenton-resistance;RSAT=23mΩat6.5A •6amps | DIODESDiodes Incorporated 美台半导体 | DIODES |
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