512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

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512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

文件：261.39 Kbytes 页数：20 Pages

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512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

文件：261.39 Kbytes 页数：20 Pages

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华邦电子

512K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in

文件：261.39 Kbytes 页数：20 Pages

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512K ´8 CMOS FLASH MEMORY

GENERAL DESCRIPTION\nThe W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K  ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in fast write · Single 5-volt write (erase and program) operations\n· Fast page-write operations\n- 256 bytes per page\n- Page write (erase/program) cycle: 5 mS (typ.)\n- Effective byte-write (erase/program) cycle time: 19.5 mS\n- Optional software-protected data write\n· Fast chip-erase operation: 50 mS\n· Two 1;

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512K X 8 CMOS FLASH MEMORY

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