Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：125 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：142.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：129.289 Kbytes 页数：6 Pages

VishayVishay Siliconix

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：128.22 Kbytes 页数：5 Pages

VishayVishay Siliconix

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Trench MOS Schottky technology

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VishayVishay Siliconix

威世科技

Trench MOS Schottky technology

文件：135.17 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：128.22 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世科技

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 45V 20A TO-220AB

Vishay General Semiconductor - Diodes Division