| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VT2060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：130.639 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT2060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：203.52 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Low forward voltage drop, low power losses FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：158.22 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：203.52 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：130.639 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a 文件：130.639 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.52 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VT2060C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
中性 |
23+ |
TO220-3 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
性 |
24+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
询价 | ||
VISHAY |
17+ |
TO220 |
6200 |
100%原装正品现货 |
询价 | ||
VISHAY |
23+ |
TO-220 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VIS |
23+ |
TO-220AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY/威世 |
12+ |
TO220 |
125 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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