| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I 文件：124.87 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：142.6 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.1 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：134.92 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：142.6 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：135.72 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：135.72 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application 文件：135.08 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.1 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：135.08 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VT1045C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
TO220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
23+ |
TO220AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY |
1117+ |
T0220 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY |
23+ |
T0220 |
2520 |
原厂原装正品 |
询价 | ||
VISHAY |
23+ |
T0220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
询价 | ||
Vishay General Semiconductor - |
25+ |
TO-220-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
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