Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

• Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and

文件：159.09 Kbytes 页数：6 Pages

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Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：109.97 Kbytes 页数：4 Pages

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：142.6 Kbytes 页数：5 Pages

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

文件：124.87 Kbytes 页数：5 Pages

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：142.6 Kbytes 页数：5 Pages

VishayVishay Siliconix

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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

文件：135.72 Kbytes 页数：5 Pages

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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

文件：135.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application

文件：135.08 Kbytes 页数：5 Pages

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

文件：130.58 Kbytes 页数：5 Pages

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Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

文件：156.9 Kbytes 页数：6 Pages

VishayVishay Siliconix

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