MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如快充等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

Vergiga

威兆半导体

MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：163.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 60 V, 9 m, 48 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：163.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

VIT

上传：深圳市卓越微芯电子有限公司

DO-214AC

VISHAY/威世

上传：深圳市星宇佳科技有限公司