MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如便携储能电源和电池保护等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

Vergiga

威兆半导体

N-Channel MOSFET

• Enhancement mode\n• Very low on-resistance RDS(on) @ VGS=4.5 V\n• 100% Avalanche Tested\n• Pb-free lead plating; RoHS compliant;

Vergiga

威兆半导体

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For amplification of low-frequency output ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

文件：117.72 Kbytes 页数：5 Pages

Panasonic

松下

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

文件：44.45 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Networks

文件：61.83 Kbytes 页数：1 Pages

Bourns

伯恩斯

Networks

文件：61.83 Kbytes 页数：1 Pages

Bourns

伯恩斯