VS-HFA50PA60CHN3_V01中文资料威世数据手册PDF规格书

FEATURES

• Ultrafast and ultrasoft recovery

• Very low IRRM and Qrr

• AEC-Q101 qualified, meets JESD 201

class 1A whisker test

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA50PA60CHN3 is a state of the art center tap

ultrafast recovery diode. Employing the latest in epitaxial

construction and advanced processing techniques it

features a superb combination of characteristics which

result in performance which is unsurpassed by any rectifier

previously available. With basic ratings of 600 V and 25 A

per leg continuous current, the VS-HFA50PA60CHN3 is

especially well suited for use as the companion diode for

IGBTs and MOSFETs. In addition to ultrafast recovery time,

the HEXFRED® product line features extremely low values of

peak recovery current (IRRM) and does not exhibit any

tendency to “snap-off” during the tb portion of recovery. The

HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in

both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED VS-HFA50PA60CHN3 is ideally suited for

applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.