VP1008B说明书PDF资料行情报价新泽西半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
VP1008	文件：104.99 Kbytes Page：3 Pages	P-Channel Enhancement-Mode D-MOS POWER FETs [TOPAZSEMICONDUCTOR] FEATURES ■GateStand-offVoltage,±40Vmin. ■LowOutputandTransferCapacitances ■N-ChannelComplementsAvailable APPLICATIONS ■MotorControls ■LogicInterface ■PulseAmplifiers	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
VP1008B	文件：91.24 Kbytes Page：4 Pages	P-Channel Enhancement-Mode MOSFET Transistors Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
VP1008B	文件：93.68 Kbytes Page：2 Pages	P-Channel Enhancement-Mode MOSFET Transistors Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
VP1008L	文件：91.24 Kbytes Page：4 Pages	P-Channel Enhancement-Mode MOSFET Transistors Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
VP1008L	文件：93.68 Kbytes Page：2 Pages	P-Channel Enhancement-Mode MOSFET Transistors Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
VP1008M	文件：91.24 Kbytes Page：4 Pages	P-Channel Enhancement-Mode MOSFET Transistors Features ●High-SideSwitching ●LowOn-Resistance:2.5Ω ●ModerateThreshold:–3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuf	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
VP1008M	文件：93.68 Kbytes Page：2 Pages	P-Channel Enhancement-Mode MOSFET Transistors Features ●High-SideSwitching ●LowCm-Resistance:2.5Q ●ModerateThreshold:-3.4V ●FastSwitchingSpeed:40ns ●LowInputCapacitance:75pF Benefits ●EaseinDrivingSwitches ●LowOffset(Error)Voltage ●Low-VoltageOperation ●High-SpeedSwitching ●EasilyDrivenWithoutBuff	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
VP1008CSM4	文件：17.92 Kbytes Page：2 Pages	P-CHANNEL ENHANCEMENT MODE MOSFET	SEME-LAB Seme LAB	SEME-LAB
VP1008CSM4	文件：151.83 Kbytes Page：3 Pages	P-CHANNEL ENHANCEMENT MODE MOSFET	SEME-LAB Seme LAB	SEME-LAB
VP1008CSM4_10	文件：151.83 Kbytes Page：3 Pages	P-CHANNEL ENHANCEMENT MODE MOSFET	SEME-LAB Seme LAB	SEME-LAB
100	文件：3.83844 Mbytes Page：2 Pages	100/200	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
100	文件：359.37 Kbytes Page：2 Pages	PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst	Riedon Riedon Inc.	Riedon
100	文件：178.23 Kbytes Page：4 Pages	SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment	PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司	PRODUCTWELL
100	文件：1.55809 Mbytes Page：10 Pages	TOGGLESWITCHES-MINIATURE	E-SWITCH E-Switch, Inc.	E-SWITCH
100	文件：110.74 Kbytes Page：2 Pages	1.3WattsAxialLeadedZenerDiodes VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司	SUNMATE
100	文件：622.5 Kbytes Page：1 Pages	ProtectiveCoversUltrasonically-weldedwithStrainRelief	ARIES Aries Electronics,inc	ARIES
100	文件：254.3 Kbytes Page：3 Pages	Smooth,hightorque,rollerratchethandle	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
100	文件：318.25 Kbytes Page：2 Pages	PrecisionWirewoundResistors	Riedon Riedon Inc.	Riedon
100	文件：421.62 Kbytes Page：4 Pages	BladeFuseBlockandClips100Series>CircuitBoardMountable Features&Benefits ■RoHS-compliantand lead-free ■SuitableforISO8820-3Type FandCbladefuses ■Specialcopperalloyresulting inhighercurrentratings ■Tinplatedleadsforeasy solderingprocess ■ULRecognizedtoUL4248-1 andCSA4248.1 ■LowprofiledesignforPC boardm	LittelfuseLittelfuse Inc. 力特力特公司	Littelfuse
100	文件：817.73 Kbytes Page：4 Pages	POWERINDUCTOR ●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc	AITSEMIAiT Semiconductor Inc. AiT創瑞科技	AITSEMI

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详细参数

型号：
VP100
功能描述：
MOSFET 100V 5 OHM
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	VP1008B	Vishay	23+	TO-39	19567		询价
深圳市特顺芯科技有限公司	VP1008B	SILICONIX	00+	TO393	18		询价
深圳市毅创腾电子科技有限公司	VP1008B	VISHAY		TO	4096	正品原装--自家现货-实单可谈	询价
齐创科技(上海,北京,青岛)有限公司	VP1008B	CALOGIC	23+	PLCC	5000	原装正品,假一罚十	询价
深圳市莱克讯科技有限公司	VP1008B	VISHAY	2017+	TO	22556	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市博浩通科技有限公司	VP1008B	SILICONIX	23+	TO393	8890	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
深圳市佳鑫美电子科技有限公司	VP1008B	VISHAY	22+	CAN-3	4650		询价
上海鑫科润电子科技有限公司	VP1008B	Vishay	2000	TO39	4098	原装现货海量库存欢迎咨询	询价
千层芯半导体(深圳)有限公司	VP1008B	VISHAY	2018+	TO	30617	一级代理全新原装热卖	询价
深圳市科恒伟业电子有限公司	VP1008B	VISHAY	1844+	TO-39	6528	只做原装正品假一赔十为客户做到零风险!!	询价

更多VP100供应商更新时间2024-4-30 17:12:00

详细参数

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