Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

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VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：136.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世科技

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 30A 45V TO-262AA

Vishay General Semiconductor - Diodes Division