| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VFT3060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：79.84 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VFT3060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：128.37 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VFT3060C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：148.99 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：128.37 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a 文件：202.27 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Schottky technology FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：157.03 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and 文件：79.84 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：76.91 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：173.59 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VFT3060C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOD27 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY |
24+ |
TO-220F |
65200 |
一级代理/放心采购 |
询价 | ||
VISHAY/威世 |
22+ |
TO-220F |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3283 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY/威世 |
24+ |
TO-220F |
39197 |
郑重承诺只做原装进口现货 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY |
23+ |
TO-220AF |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
ITO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Semiconductor Diodes Di |
23+ |
ITO220AB |
9000 |
原装正品，支持实单 |
询价 | ||
VISHAY/威世 |
1741 |
TO-220 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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