首页 >VFT3060C-E3>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
VFT3060C-E3 | Trench MOS Schottky technology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 | Vishay | |
VFT3060C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | Vishay | ||
包装：卷带（TR） 封装/外壳：TO-220-3 全封装，隔离接片 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 60V ITO220 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
TrenchMOSSchottkytechnology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技 | Vishay | ||
TrenchMOSSchottkytechnology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 | Vishay | ||
TrenchMOSSchottkytechnology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VFT3060C-E3
- 制造商：
Vishay Semiconductors
- 功能描述：
30A,60V, DUAL TRENCH SKY RECT.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
21+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY |
18+ |
TO-220F |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY |
18+ |
TO-220F |
2000 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
VISHAY |
2023+ |
TO-220F |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
VISHAY |
18+ |
TO-220F |
2100 |
全新原装 实单必成 |
询价 | ||
VISHAY/威世 |
23+ |
NA/ |
5250 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY |
2017+ |
TO-220F |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
VISHAY |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
23+ |
N/A |
45780 |
正品授权货源可靠 |
询价 |
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