| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VFT1060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
VFT1060C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Trench MOS Schottky technology FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Package：TO-220-3 全封装，隔离接片；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 10A 60V ITO-220AB | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
详细参数
- 型号：
VFT1060C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
50 |
全新原装 货期两周 |
询价 | |||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
ITO-220A |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
11+ |
TO-220F |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
12250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
VISHAY/威世 |
24+ |
TO-220F |
60000 |
询价 | |||
VISHAY |
17+ |
TO220F-3 |
6200 |
询价 | |||
VISHAY/威世通 |
20+ |
TO220F-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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