| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VFT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：74.1 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：131.37 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：131.37 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application 文件：130.729 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：128.9 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：128.9 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：83.36 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：83.36 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：83.36 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：86.69 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VFT1045C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY原装 |
25+23+ |
TO-220F |
22756 |
绝对原装正品全新进口深圳现货 |
询价 | ||
JD/晶导 |
23+ |
SMB(DO-214AA) |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY原装 |
24+ |
TO-220F |
30980 |
原装现货/放心购买 |
询价 | ||
VISHAY |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
ITO-220A |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY |
15+ |
TO-220F |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
ITO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VFT1045CBP-M3/4W |
3000 |
3000 |
询价 |
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