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VF20150S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技

VF20150S

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

VF20150S_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

VF20150S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技

VF20150S-E3

High Voltage Barrier Schottky Rectifier

FEATURES ·Lowforwardvoltagedrop,lowpowerlosses ·Highefficiencyoperation APPLICATIONS ·highfrequencyconverters ·switchingpowersupplies ·freewheelingdiodes ·OR-ingdiode ·DC/DCconverters ·reversebatteryprotection

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

VF20150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea

VishayVishay Siliconix

威世科技

VF20150SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技

VF20150SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

VF20150SG_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技

VF20150SG-E3

High efficiency operation

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO

VishayVishay Siliconix

威世科技

VF20150SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技

VF20150SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

UltraLowVF=0.57VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECand

VishayVishay Siliconix

威世科技

VF20150S_15

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150SG

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150SG

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

VF20150SG_10

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    VF20150S

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
VISHAY
23+
TO-220
8600
全新原装现货
询价
VISHAY
1735+
TO220F
6528
科恒伟业!只做原装正品!假一赔十!
询价
VISHAY
23+
TO-TO-220
33500
全新原装真实库存含13点增值税票!
询价
VISHAY
2020+
TO220F
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
VISHAY
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
JINGDAO/晶导微
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
询价
VISHAY/威世
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
询价
VISHAY
21+
TO220F
694
原装现货假一赔十
询价
VISHAY/威世
23+
TO-220
10000
公司只做原装正品
询价
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
更多VF20150S供应商 更新时间2024-4-30 16:23:00