VEML6040

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040colorsensorsensesred,green,blue,andwhite lightandincorporatesphotodiodes,amplifiers,andanalog/ digitalcircuitsintoasinglechipusingCMOSprocess.With thecolorsensorapplied,thebrightness,andcolor temperatureofbacklightcanbeadjustedbaseona

VEML6040

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040colorsensorsensesred,green,blue,andwhite lightandincorporatesphotodiodes,amplifiers,andanalog/ digitalcircuitsintoasinglechipusingCMOSprocess.With thecolorsensorapplied,thebrightness,andcolor temperatureofbacklightcanbeadjustedbaseona

VEML6040

RGBW Color Sensor with I2C Interface

VEML6040_V01

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040colorsensorsensesred,green,blue,andwhite lightandincorporatesphotodiodes,amplifiers,andanalog/ digitalcircuitsintoasinglechipusingCMOSprocess.With thecolorsensorapplied,thebrightness,andcolor temperatureofbacklightcanbeadjustedbaseona

VEML6040_V02

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040colorsensorsensesred,green,blue,andwhite lightandincorporatesphotodiodes,amplifiers,andanalog/ digitalcircuitsintoasinglechipusingCMOSprocess.With thecolorsensorapplied,thebrightness,andcolor temperatureofbacklightcanbeadjustedbaseona

VEML6040A3OG

RGBW Color Sensor with I2C Interface

DESCRIPTION VEML6040colorsensorsensesred,green,blue,andwhite lightandincorporatesphotodiodes,amplifiers,andanalog/ digitalcircuitsintoasinglechipusingCMOSprocess.With thecolorsensorapplied,thebrightness,andcolor temperatureofbacklightcanbeadjustedbaseona

VEML6040A3OG

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：4-TFLGA 类别：传感器，变送器 颜色传感器 描述：RGBW COLOR SENSOR I2C INTERFACE

Vishay Semiconductor Opto Division

VEML6040-SB

包装：散装 类别：开发板，套件，编程器 评估板 - 传感器 描述：EVAL BOARD FOR VEML6040

Vishay Semiconductor Opto Division

APT6040

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT6040AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

APT6040BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

APT6040BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

APT6040BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

APT6040BVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

APT6040BVFRG

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

APT6040BVR

POWERMOSV

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

APT6040BVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

APT6040HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

APT6040SVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

APT6040SVFRG

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.