MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 1.8V drive. • [SBD] • Short

文件：67.1 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

ONSEMI

安森美半导体

Crystal oscillator

文件：112.73 Kbytes 页数：1 Pages

EPSONTOYOCOM

爱普生

Low noise, High PSRR, High speed, CMOS

文件：2.13955 Mbytes 页数：10 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

Low noise, High PSRR, High speed, CMOS LDO

文件：3.25625 Mbytes 页数：14 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司