MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Features • DC/DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 4V drive. • [SBD] • Short reverse recovery time. • Low forward vo

文件：49.22 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

ONSEMI

安森美半导体

Low noise, High PSRR, High speed, CMOS LDO

文件：4.27026 Mbytes 页数：13 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

3.96mm (.156) Pitch KK짰 Crimp Terminal Housing

文件：424.07 Kbytes 页数：4 Pages

MOLEX3Molex Electronics Ltd.

莫仕

3.96mm (.156) Pitch KK짰 Crimp Terminal Housing

文件：424.07 Kbytes 页数：4 Pages

MOLEX3Molex Electronics Ltd.

莫仕