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VEC2612

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

SANYOSanyo

三洋三洋电机株式会社

2612

BandpassFilter

KRKR Electronics, Inc.

KR Electronics, Inc.

2612

SMDRFManualTunableInductor

YANTELYantel Corporation

研通高频深圳市研通高频技术有限公司

2612B

2600BSystemSourceMeterSMUInstruments

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

2612B

2600BSystemSourceMeter®SMUInstruments

KeyFeatures •Tightlyintegrated,4-quadrantvoltage/current sourceandmeasureinstrumentsofferbestinclass performancewith6½-digitresolution •Familyofmodelsofferindustry’swidestdynamic range:10Apulseto0.1fAand200Vto100nV •Built-inwebbrowserbasedsoftwareenabl

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

2612G

LEDBACKLIGHTFORLCDDISPLAY

LEDBACKLIGHTFORLCDDISPLAY

MICRO-ELECTRONICS

Micro Electronics

AAT2612

Step-DownDC/DCConverterWithThreeHighPSRRLDOs

SKYWORKSSkyworks Solutions Inc.

思佳讯美国思佳讯公司

AG2612G

LEDBACKLIGHTFORLCDDISPLAY

LEDBACKLIGHTFORLCDDISPLAY

MICRO-ELECTRONICS

Micro Electronics

AN2612

Single5-VDCpowersupply

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

AP2612GY-HF

Capableof1.8VGateDrive,SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

DEM2612C

Lowprofile(2.6x2.8mmsquare,1.2mmMax.height).

Toko

Toko Inc.

DG2612

Low-Voltage,LowRON,SPDTAudioSwitchwithNegativeSwingCapability

FEATURES •Lowvoltageoperation(1.8Vto5.5V) •Lowon-resistance-RON:1.0Ωat2.7V •Highbandwidth BENEFITS •Negativesignalswingcapability •Shuntswitchtoeliminateswitchingnoise •SimplifieddesignwithdirectDCcoupling •SpacesavingSC-89package APPLICATIONS •

VishayVishay Siliconix

威世科技

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技

EC2612

40GHzSuperLowNoisepHEMT

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

EC2612

40GHzSuperLowNoisePHEMT

Description TheEC2612isbasedona0.15µmgatepseudomorphichighelectronmobilitytransistor(0.15µmPHEMT)technology.Gatewidthis120µmandthe0.15µmT-shapedaluminiumgatefeatureslowresistanceandexcellentreliability.Thedeviceshowsaveryhightransconductancewhichleadsto

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

FDC2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •1.1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDC2612

N-ChannelMOSFET200V,1.5A,0.7

Features Vbs=200V b=1.5A Roson)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

FDD2612

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •4.9A,2

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    VEC2612

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

供应商型号品牌批号封装库存备注价格
三年内
1983
纳立只做原装正品13590203865
询价
ON/安森美
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ON
2021
N/A
6000
询价
SAY
1535+
341
询价
ON
2022+
SOT-28FL / VEC-8
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
23+
N/A
46180
正品授权货源可靠
询价
ON Semiconductor
22+
8VEC
9000
原厂渠道,现货配单
询价
ON Semiconductor
23+
8VEC
9000
原装正品,支持实单
询价
ON Semiconductor
23+
8VEC
8000
只做原装现货
询价
ONSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
更多VEC2612供应商 更新时间2024-4-29 16:13:00