rohs compliance

文件：515.549 Kbytes 页数：1 Pages

Surge

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.75mm). • High allowable power dissi

文件：244.82 Kbytes 页数：4 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The best suited for DC / DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V

文件：72.73 Kbytes 页数：6 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • DC/DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 4V drive. [SBD] • S

文件：48.51 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Features • DC/DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 4V drive. • [SBD] • Short reverse recovery time. • Low forward vo

文件：49.22 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

General-Purpose Switching Device Applications Features • DC / DC converter. • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 1.8V drive. • [SB

文件：53.8 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

General-Purpose Switching Device Applications Features • DC / DC converter. • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 1.8V drive. • [SB

文件：54.63 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

General-Purpose Switching Device Applications Features • DC / DC converter. • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • 1.8V drive. • [SBD] • Short reverse re

文件：54.13 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

General-Purpose Switching Device Applications Features • DC/DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • 4V drive. • [SBD]

文件：72.67 Kbytes 页数：6 Pages

SANYO

三洋

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

General-Purpose Switching Device Applications Features • DC / DC converter. • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching.

文件：64.3 Kbytes 页数：6 Pages

SANYO

三洋