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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
ACE5175X	文件：255.9 Kbytes Page：4 Pages	7V600mA75dBHighPSRR,HighSpeedLDO	ACE ACE Technology Co., LTD.	ACE
ACE5175XBNH	文件：255.9 Kbytes Page：4 Pages	7V600mA75dBHighPSRR,HighSpeedLDO	ACE ACE Technology Co., LTD.	ACE
AD5175	文件：1.033619 Mbytes Page：20 Pages	Single-Channel,1024-Position,DigitalRheostatwithI2CInterfaceand50-TPMemory	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
BX5175	文件：73.67 Kbytes Page：1 Pages	RFAMPLIFIERMODEL	APITECH API Technologies Corp	APITECH
C5175G	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175K	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
C5175V	文件：880.27 Kbytes Page：2 Pages	5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT	POWERBOX Powerbox manufactures	POWERBOX
CEB5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23mΩ@VGS=-10V. RDS(ON)=28mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP5175	文件：683.38 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP5175	文件：503.67 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU5175	文件：269.98 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-40A,RDS(ON)=23mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=28mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU5175	文件：274 Kbytes Page：4 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23mΩ@VGS=-10V. RDS(ON)=28mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEZ5175	文件：535.62 Kbytes Page：5 Pages	P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-48A,RDS(ON)=23mW@VGS=-10V. RDS(ON)=28mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
EL5175	文件：753.55 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
EL5175	文件：337.26 Kbytes Page：16 Pages	550MHzDifferentialLineReceivers	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
EL5175	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
EL5175IS	文件：441.12 Kbytes Page：15 Pages	550MHzDifferentialLineReceivers TheEL5175andEL5375aresingleandtriplehighbandwidthamplifiersdesignedtoextractthedifferencesignalfromnoisyenvironments.Theyareprimarilytargetedforapplicationssuchasreceivingsignalsfromtwisted-pairlinesoranyapplicationwherecommonmodenoiseinjectionislikelyto	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil

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详细参数

型号：
VC5175SC
制造商：
VLSI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	VC5175SC		22+	SMD	7500	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市特顺芯科技有限公司	VC5175SC	VLSI	06/07+	SMD28	503		询价
深圳市博浩通科技有限公司	VC5175SC	VLSI	23+	SOP	7750	全新原装优势	询价
深圳市昌源伟业科技有限公司	VC5175SC		15+	SOP28	60	全新原装正品现货	询价
深圳市卓越微芯电子有限公司	VC5175SC	VLSI	2020+	SMD28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市维尔达电子有限公司	VC5175SC		2023+	SOP	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
贸泽芯城（深圳）电子科技有限公司	VC5176Q	VANCHIP	2018	QFN	30000	原厂VIP渠道,亚太地区一级代理商,可提供更多数量!	询价
深圳市恒诺芯科技有限公司	VC5176Q		2322+	NA	33220	无敌价格主销品牌正规渠道订货免费送样!!!	询价
深圳市毅创腾电子科技有限公司	VC520			QFN32	1000	原装长期供货!	询价
深圳市华斯顿科技有限公司	VC520		22+23+	QFN32	41835	绝对原装正品全新进口深圳现货	询价

更多VC5175SC供应商更新时间2024-4-30 15:02:00

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