Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please

文件：104.45 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：315.8 Kbytes 页数：2 Pages

ISC

无锡固电

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：88.66 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please

文件：104.45 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

文件：103.81 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application

文件：103.81 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：103.81 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：103.81 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：83.92 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技