N-Channel 550V (D-S)Power MOSFET

文件：680.71 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：450.13 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

2-SMD

VISHAY/威世

上传：深圳市华芯伟电子科技有限公司