Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：631 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 0-V (D-S) MOSFET

文件：616.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：631 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel 30-V (D-S) MOSFET

文件：494.51 Kbytes 页数：6 Pages

VBSEMI

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Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 页数：18 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 页数：18 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司