| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
VB20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技 | Vishay | |
VB20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | Vishay | |
VB20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | Vishay | |
VB20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Schottky technology UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | Vishay | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V TO263 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V TO263 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
FastRecoveryRectifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHMODESchottkyPowerRectifier TheSWITCHMODEPowerRectifieremploystheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforuseasrectifiersinverylow–voltage,high–frequencys | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
20.0AmpereSurfaceMountDualCommonCathodeSchottkyBarrierRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
NoninductivePlanarLowCost,20WattTO220PackageThickFilmResistor | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | BITECH | ||
NoninductivePlanarLowCost,20WattTO220PackageThickFilmResistor | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | BITECH | ||
NoninductivePlanarLowCost,20WattTO220PackageThickFilmResistor | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | BITECH | ||
UltraLowforwardvoltagedrop,lowpowerloss | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
UltraLowforwardvoltagedrop,lowpowerloss | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT |
详细参数
- 型号：
VB20200C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
1926+ |
TO-263 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
VISHAY |
12+ |
TO263 |
133003 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
VISHAY |
2023+ |
TO263 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
VISHAY |
19+ |
TO-263 |
23999 |
全新原装 实单必成 |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 | ||
VISHAY |
22+23+ |
TO-263 |
25494 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
TO-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
VISHAY/威世 |
2016 |
TO-263AB |
15000 |
原装正品现货,可开发票,假一赔十 |
询价 | ||
Vishay |
23+ |
TO263AB |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
VISHAY |
2020+ |
TO263 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
相关规格书
更多- VB20200C-E3/4W
- VB20200G-E3/8W
- VB20202C-M3/8W
- VB20202G-M3/4W
- VB20202G-M3/8W-CUTTAPE
- VB20-2051
- VB-2141
- VB2251
- VB3.2/2/12
- VB300
- VB30100C-E3/8W
- VB30100S-E3/8W
- VB30150C-E3/4W
- VB30200C-E3/8W
- VB30202C-M3/8W
- VB30-2031
- VB30-2071
- VB3211
- VB3221
- VB-3241
- VB325SPTR-E
- VB335-75
- VB400
- VB40100C-E3/8W
- VB40100G-E3/8W
- VB40150C-E3/4W
- VB40-2031
- VB40-2061
- VB4251
- VB525SPTR-E
- VB60100C-E3/4W
- VB60170G-E3/8W
- VB60-2061
- VB6A64CAP1VO
- VB80-P7X9-8/CS12
- VB-A103
- VBA108
- VBA109-75
- VBA111
- VBA90-1
- VBE100-12NO7
- VBE17-12NO7
- VBE26-06NO7
- VBE55-06NO7
- VBE60-06A
相关库存
更多- VB20200C-E3/8W
- VB20202C-M3/4W
- VB20202C-M3/8W-CUTTAPE
- VB20202G-M3/8W
- VB20-2031
- VB2121
- VB-2221
- VB2-FSW/FKW/FSW45
- VB3.2/2/6
- VB30100C-E3/4W
- VB30100S-E3/4W
- VB30120S-E3/4W
- VB30200C-E3/4W
- VB30202C-M3/4W
- VB30202C-M3/8W-CUTTAPE
- VB30-2051
- VB-3111
- VB-3211
- VB-3221
- VB325SP-E
- VB334N
- VB-36STBU-E
- VB40100C-E3/4W
- VB40100C-E3/8W-CUTTAPE
- VB40120C-E3/4W
- VB40170C-E3/8W
- VB40-2051
- VB40-2071
- VB525SP-E
- VB526SP-E
- VB60100C-E3/8W
- VB60-2051
- VB60-2071
- VB-6STBU-E
- VBA100-1
- VBA107
- VBA109
- VBA110
- VBA112
- VBA90-1-75
- VBE17-06NO7
- VBE20-20NO1
- VBE26-12NO7
- VBE55-12NO7
- VBED15-D24-S12
