| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VB20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：166.57 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20200C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.99 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：157.42 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20200C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：147.86 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Schottky technology Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：155.83 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：214.84 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：315.19 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：166.57 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A Ultra Low VF = 0.60 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：166.57 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.99 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VB20200C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
8600 |
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | |||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
VISHAY |
25+23+ |
TO-263 |
25494 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY/威世 |
2016 |
TO-263AB |
15000 |
原装正品现货,可开发票,假一赔十 |
询价 | ||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
25+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
TO-263AB |
4500 |
原装正品假一罚百!可开增票! |
询价 | ||
VISHAY |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
询价 |
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