High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

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VishayVishay Siliconix

威世科技

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TO-277A

VishayVishay Siliconix

威世科技

上传：海芯未来半导体电子（深圳）有限公司

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VishayVishay Siliconix

威世科技

上传：深圳市宏浩通电子科技有限公司