Surface Mount Trench MOS Barrier Schottky Rectifier

文件：120.3 Kbytes 页数：6 Pages

VishayVishay Siliconix

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Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions o

文件：134.76 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions o

文件：134.76 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：111.75 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：136.1 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface Mount Trench MOS Barrier Schottky Rectifier

文件：136.1 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

分立 Very low profile - typical height of 0.95 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世科技

Package：DO-221BC，SMA 扁平引线裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 3A DO221BC

Vishay General Semiconductor - Diodes Division