Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：127.27 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：101.78 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：127.27 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：98.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Very low profile - typical height of 1.7 mm

文件：109.09 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Very low profile - typical height of 1.7 mm

文件：109.09 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：98.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A

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Vishay

威世科技

肖特基二极管与整流器 40A, 120V, SMPD, TRENCH SKY RECT.

Vishay

威世科技