| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
V30120S | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 |  | |
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/EC | VishayVishay Siliconix 威世科技 | | |
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | | |
V30120S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/EC | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature2 | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技 | | ||
Low forward voltage drop, low power losses High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature2 | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature2 | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技 | |
详细参数
- 型号：
V30120S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
1436+ |
TO-220 |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
VISHAY |
23+ |
TO220 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
VISHAY |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
VISHAY |
1822+ |
TO-220F |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VISHAY |
18+ |
TO-220F |
41200 |
原装正品,现货特价 |
询价 | ||
VISHAY |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
VISHAY |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
LINEAR/凌特 |
23+ |
MSOP8 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
VISHAY |
22+ |
TO-220 |
32350 |
原装正品 假一罚十 公司现货 |
询价 |
相关规格书
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相关库存
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- V3-1
- V3-1002
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- V3-1075
- V3-1113
- V3-1123-D8
- V3-115
- V312002-P
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- V320LA10CP
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- V3210
- V3216
- V321BA60
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- V321HB34
- V3-22
- V3225
- V3-23
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- V3-245
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