Trench MOS Schottky technology

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s

文件：167.08 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：214.47 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nMeets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) package)\nLow forward voltage drop, low power losses;

Vishay

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s

文件：167.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：214.47 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s

文件：167.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：161.11 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V TO220

Vishay General Semiconductor - Diodes Division