High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：105.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：105.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件：97.08 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：105.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：105.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 80V 15A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 80V 15A TO277A

Vishay General Semiconductor - Diodes Division