Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel 2.5V Specified PowerTrench™ MOSFET

General Description\nThese P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.\nThese devices have been designe • -1.9 A, -20 V.\n   RDS(on) = 0.170 Ω @ VGS = -4.5 V\n   RDS(on) = 0.250Ω @ VGS = -2.5 V\n• Low gate charge (3 nC typical).\n• Fast switching speed.\n• High performance trench technology for extremely low RDS(ON).\n• SuperSOTTM-6 package: small footprint (72% smaller\n   than standard SO-8); lo;

ONSEMI

安森美半导体

FAIRCHILD/仙童
SSOP-14

FAIRCHILD/仙童

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ON
TSOP14

ON

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MICROCHIP
QFN-36

Microchip

微芯科技

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