零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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HEXFETPOWERMOSFET DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
22A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelMOSFET | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 | ESTEK | ||
N-ChannelMOSFET600V,22A,0.165W | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFET600V,22A,0.165W Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.28Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMPSMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •EnhancedbodydiodedV/dtcapability •Materialcategorization:fordefinitionsofcompliance ple | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EnhancedBodyDiodedV/dtCapability •ComplianttoRoHSDirective2002/95/EC BENEFITS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EnhancedBodyDiodedv/dtCapability Applications •HardSwitchingPrimaryorPFSSwitch •SwitchM | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC/友顺 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
UTC |
23/22+ |
TO247 |
6000 |
20年老代理.原厂技术支持 |
询价 | ||
NEC |
2020+ |
QFN |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
NEC |
21+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
1547+ |
QFN |
1598 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
POWER |
2023+ |
QFN |
1997 |
原厂全新正品旗舰店优势现货 |
询价 | ||
NEC/优质渠道 |
QFN |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
NEC/原装 |
15+ |
QFN |
1598 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
NEC |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 |
相关规格书
更多- UPS015
- UPSD3233B-40T6
- UPSD3233BV-24U6
- UPSD3234A-40U6
- UPSD3254A-40U6
- US1050
- US1237SC
- US1260CM
- US1261CM
- US1G
- US2075
- US3007CW
- US3018CW
- US3034
- USB62
- USBDF01W5
- USBN9603-28M
- USBP11A
- UT611024JC-15
- UT61256JC-8
- UT6164C32Q-6
- UT61L1024LC-12
- UT621024PC-70LL
- UT62256CPC-70LL
- UT62256SC-35
- UT6264CSC-70LL
- UT62L1024LC-70LL
- UTC31002
- UTC34018
- UTC386
- V052
- V30058-T1
- V53C16256HK50
- V53C16258HK35
- V53C16258HK50
- V53C818HK35
- V62C518256LL-70F
- VAD2150
- VC45210-PBC80A2
- VC8410-PQC
- VD5013
- VD5026
- VD5027
- VD5028-4
- VFC110AP
相关库存
更多- UPSD3212C-40U6
- UPSD3233BV-24T6
- UPSD3234A-40T6
- UPSD3234BV-24U6
- UPSD3254BV-24U6
- US1150
- US1260
- US1261
- US1D
- US1J
- US3004CW
- US3011CW
- US3021MCW
- US3034CS
- USB6B1RL
- USBN9602-28M
- USBN9604-28M
- USBUF01W6
- UT61256JC-12
- UT6132C32AQ-6
- UT6164C64AQ-5
- UT61M256JC-15
- UT621024SC-70LL
- UT62256CSC-70LL
- UT6264CPC-70LL
- UT6264SC-70
- UTC2030
- UTC3308
- UTC34063
- UZZ9002
- V1-1
- V3021
- V53C16258HK25
- V53C16258HK40
- V53C8125HK45
- V53C8256HK45
- V86999
- VC45210-PBC80
- VC5257-0001
- VD5012
- VD5014
- VD5026-4
- VD5027-4
- VECANA01
- VFC320BG