UPD78013H

MOS INTEGRATED CIRCUIT

FEATURES ·LowEMInoisemodel ·Largeon-chipROM&RAM ·Externalmemoryexpansionspace:64Kbytes ·Instructionexecutiontimecanbevariedfromhigh-speed(0.4ms)toultra-low-speed(122ms) ·I/Oports:53(N-chopen-drain:4) ·8-bitresolutionA/Dconverter:8channels ·Serial

78013

26(19/38)AWGTinnedCopper

SKY78013

Hybridarchitecture-separateGSM,WCDMApaths

TA78013AP

THREETERMINALPOSITIVEVOLTAGEREGULATORS

Features -SuitableforC-MOS,TTL,theother DigitalIC'sPowerSupply -InternalThermalOverloadProtection -InternalShortCircuitCurrentLimiting -OutputCurrentinexcessof1A

UPD78013F

MOSINTEGRATEDCIRCUIT

·Externalmemoryexpansionspace:64Kbytes ·Minimuminstructionexecutiontimecanbevariedfromhigh-speed(0.4ms)toultra-low-speed(122ms) ·I/Oports:53(N-chopen-drain:4) ·8-bitresolutionA/Dconverter:8channels ·Serialinterface:2channels ·Timer:5channels ·Supplyv

UPD78013FY

MOSINTEGRATEDCIRCUIT

FEATURES ·Serialinterface:2channels(I2Cbusmode:1channel) ·Largeon-chipROM&RAM ·Externalmemoryexpansionspace:64Kbytes ·Minimuminstructionexecutiontimecanbevariedfromhigh-speed(0.4ms)toultra-low-speed(122ms) ·I/Oports:53(N-chopen-drain:4) ·8-bitre