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43256

32,768x8-BITSTATICMIX-MOSRAM

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

D43256BGU

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256

32,768x8-BITSTATICMIX-MOSRAM

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256A

32,768X8-BITSTATICCMOSRAM

Description TheμPD43256Aisa32,768-wordby8-bitstaticRAMfabricatedwithadvancesilicon-gatetechnology.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-A

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-AXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-AXX

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-AXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-BXX

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-BXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-BXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-X

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256B-X

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    UPD43256G

  • 制造商:

    NEC Electronics Corporation

  • 功能描述:

    Static RAM, 32Kx8, 28 Pin, Plastic, SOP

供应商型号品牌批号封装库存备注价格
RENESAS
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
NEC
SOP
10
询价
NEC
22+
SOP-28
4650
询价
NEC
95+
SOP
1335
全新原装进口自己库存优势
询价
NEC
17+
SOP28
9988
只做原装进口,自己库存
询价
NEC
1997
SOP
10
原装现货海量库存欢迎咨询
询价
NEC
1948+
SOP-28
6852
只做原装正品现货!或订货假一赔十!
询价
NEC
21+
SOP28
6000
绝对原裝现货
询价
NEC
2021+
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NEC
2021++
SOP28
5850
进口原装原管
询价
更多UPD43256G供应商 更新时间2024-6-4 15:00:00