262144 X 1-BIT DYNAMIC NMOS RAM

Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability.

文件：736.17 Kbytes 页数：16 Pages

NEC

瑞萨

262144 X 1-BIT DYNAMIC NMOS RAM

Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability.

文件：736.17 Kbytes 页数：16 Pages

NEC

瑞萨

262144 X 1-BIT DYNAMIC NMOS RAM

Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability.

文件：736.17 Kbytes 页数：16 Pages

NEC

瑞萨

104.6mm (4.118) matrix height 5횞7 square matrix display

文件：447.28 Kbytes 页数：3 Pages

BRIGHT

佰鸿

104.6mm (4.118) matrix height 5횞7 square matrix display

文件：447.24 Kbytes 页数：3 Pages

BRIGHT

佰鸿

256K X 1 Bit Dynamic RAM with Page / Nibble Mode

文件：988.52 Kbytes 页数：15 Pages

Samsung

三星