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UPD41256

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41256C-10

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41256C-80

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41256C-85

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41256L-10

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41256L-80

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41256L-85

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41256isa262,144-wordby1-bitdynamicRAMdesignedtooperatefromasingle+5-voltpowersupplyandfabricatedwithadoublepolylayer,N-channel,silicon-gateprocessforhighdensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

详细参数

  • 型号:

    UPD41256

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    262144 X 1-BIT DYNAMIC NMOS RAM

供应商型号品牌批号封装库存备注价格
NEC
23+
DIP
12335
询价
NEC
05+
原厂原装
1019
只做全新原装真实现货供应
询价
NEC
23+
ZIP/16
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
NEC
2016+
DIP
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
NEC
24+/25+
1022
原装正品现货库存价优
询价
NEC
24+
ZIP
6868
原装现货,可开13%税票
询价
24+
DIP
114
询价
NEC
2020+
DIP16
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NEC
1999+
DIP/16
56
原装现货海量库存欢迎咨询
询价
NEC
22+
DIP16
5000
全新原装现货!价格优惠!可长期
询价
更多UPD41256供应商 更新时间2025-7-29 16:56:00